1 item symbol ratings unit remarks drain-source voltage v ds 600 v dsx 600 continuous drain current i d 9 pulsed drain current i d(puls] 36 gate-source voltage v gs 30 maximum avalanche current i ar 9 non-repetitive e as 462.3 maximum avalanche energy repetitive e ar 16.5 maximum avalanche energy maximum drain-source dv/dt dv ds /dt 20 peak diode recovery dv/dt dv/dt 5 max. power dissipation p d 165 1.67 operating and storage t ch +150 temperature range t stg electrical characteristics (t c =25c unless otherwise specified) thermal characteristics 2SK3889-01L,s,sj fuji power mosfet maximum ratings and characteristic absolute maximum ratings (tc=25c unless otherwise specified) item symbol test conditions zero gate voltage drain current i dss v ds =600v v gs =0v v ds =480v v gs =0v v gs =30v i d =4.5a v gs =10v i d =4.5a v ds =25v v cc =300v i d =4.5a v gs =10v r gs =10 ? min. typ. max. units v v a na ? s pf nc v ns c ns min. typ. max. units thermal resistance r th(ch-c) channel to case r th(ch-a) channel to ambient 0.758 75 c/w c/w symbol bv dss v gs(th) i gss r ds(on) g fs c iss c oss c rss td (on) t r td (off) t f q g q gs q gd v sd t rr q rr item drain-source breakdown voltage gate threshold voltage gate-source leakage current drain-source on-state resistance forward transconductance input capacitance output capacitance reverse transfer capacitance turn-on time t on turn-off time t off total gate charge gate-source charge gate-drain charge diode forward on-voltage reverse recovery time reverse recovery charge test conditions i d = 250 a v gs =0v i d = 250 a v ds =v gs t ch =25c t ch =125c v ds =0v v ds =25v v gs =0v f=1mh v cc =300v i d =9a v gs =10v i f =9a v gs =0v t ch =25c i f =9a v gs =0v -di/dt=100a/s t ch =25c v v a a v a mj mj kv/s kv/s w c c 600 3.0 5.0 25 250 100 0.82 1.00 4.5 9.0 950 1425 130 195 6.0 9.0 16 24 6.0 9.0 33 50 5.5 8.3 25 38 10 15 8.0 12.0 1.10 1.50 860 7.0 -55 to +150 outline drawings (mm) www.fujielectric.co.jp/fdt/scd super f ap-g series n-channel silicon power mosfet equivalent circuit schematic 200406 v gs =-30v note *1 note *2 note *3 v ds 600v note *4 tc=25c ta=25c = < features high speed switching low on-resistance no secondary breakdown low driving power avalanche-proof applications switching regulators dc-dc converters ups (uninterruptible power supply) gate(g) source(s) drain(d) see to p4 note *1:tch 150c,repetitive and non-repetitive note *2:startingtch=25c,i as =3.6a,l=65.4mh, v cc =60v,r g =50 ? e as limited by maximum channel temperature and avalanche current. see to the ?avalanche energy? graph note *3:repetitive rating:pulse width limited by maximum channel temperature. see to the ?transient thermal impedance? graph. note *4:i f -i d , -di/dt=50a/s,v cc bv dss ,tch 150c = < = < = < = <
2 characteristics 2SK3889-01L,s,sj fuji power mosfet 0 25 50 75 100 125 150 0 20 40 60 80 100 120 140 160 180 200 allowable power dissipation pd=f(tc) pd [w] tc [ c] 0 5 10 15 20 25 30 0 5 10 15 20 6.0v 20v 10v 8.0v 6.5v vgs=5.5v id [a] vds [v] typical output characteristics id=f(vds):80 s pulse test,tch=25 c 012345678910 0.1 1 10 100 id[a] vgs[v] typical transfer characteristic id=f(vgs):80 s pulse test,vds=25v,tch=25 c 0.1 1 10 100 0.1 1 10 100 gfs [s] id [a] typical transconductance gfs=f(id):80 s pulse test,vds=25v,tch=25 c 0 5 10 15 20 0.0 0.5 1.0 1.5 2.0 6.0v rds(on) [ ? ] id [a] typical drain-source on-state resistance rds(on)=f(id):80 s pulse test,tch=25 c 10v 20v 8.0v 6.5v vgs=5.5v -50 -25 0 25 50 75 100 125 150 0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 2.25 2.50 2.75 3.00 rds(on) [ ? ] tch [ c] typ. max. drain-source on-state resistance rds(on)=f(tch):id=4.5a,vgs=10v
3 2SK3889-01L,s,sj fuji power mosfet -50-25 0 255075100125150 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 max. min. gate threshold voltage vs. tch vgs(th)=f(tch):vds=vgs,id=250 a vgs(th) [v] tch [ c] 0 10203040 0 2 4 6 8 10 12 14 qg [nc] typical gate charge characteristics vgs=f(qg):id=9a,tch=25 c vgs [v] 480v 300v vcc= 120v 10 -1 10 0 10 1 10 2 10 3 10 0 10 1 10 2 10 3 10 4 c [pf] vds [v] typical capacitance c=f(vds):vgs=0v,f=1mhz crss coss ciss 0.00 0.25 0.50 0.75 1.00 1.25 1.50 0.1 1 10 100 if [a] vsd [v] typical forward characteristics of reverse diode if=f(vsd):80 s pulse test,tch=25 c 10 -1 10 0 10 1 10 2 10 0 10 1 10 2 10 3 typical switching characteristics vs. id t=f(id):vcc=300v,vgs=10v,rg=10 ? td(on) tr tf td(off) t [ns] id [a] 0 25 50 75 100 125 150 0 50 100 150 200 250 300 350 400 450 500 i as =3.6a i as =5.4a i as =9a eav [mj] starting tch [ c] maximum avalanche energy vs. starting tch e(av)=f(starting tch):vcc=60v
4 2SK3889-01L,s,sj fuji power mosfet http://www.fujielectric.co.jp/fdt/scd/ outline drawings (mm) type(s) type(sj) 1 2 3 1 2 3 type(l) 1 2 3 1 2 3 4 4 10 -8 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 -2 10 -1 10 0 10 1 10 2 single pulse maximum avalanche current pulsewidth i av =f(t av ):starting tch=25 c,vcc=60v avalanche current i av [a] t av [sec] 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 -3 10 -2 10 -1 10 0 10 1 maximum transient thermal impedance zth(ch-c)=f(t):d=0 zth(ch-c) [c/w] t [sec]
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